This is a datasheet of a MOSFET product of Fairchild semiconductor. It details the parameters of the product.
The SPDO4N50C3 is a 560 V, 45 A CoolMOS™ power transistor offered in a PG‑TO252 package. The document provides maximum ratings, thermal and electrical characteristics, and typical performance curves for design engineers.
Key sections cover continuous and pulsed drain current limits, breakdown voltages, on‑state resistance, capacitances, avalanche energy, and detailed package dimensions. Legal and safety notices are included at the end of the sheet.
| Continuous drain current (Id) | 45 A |
|---|---|
| Pulsed drain current (Id,pulse) | 13.5 A |
| Drain‑source breakdown voltage (Vds) | 500 V |
| Gate threshold voltage (Vgs(th)) | 2.1 V – 3.9 V |
| On‑state resistance (Rds(on)) typical | 0.85 mΩ |
| Input capacitance (Ciss) | 470 pF |
| Output capacitance (Coss) | 160 pF |
| Avalanche energy (Eav) | 130 mJ |
| Power dissipation (Pd) | 50 W |
| Operating temperature range | -55 °C to +150 °C |
The device can carry a continuous drain current of 45 A at 25 °C.
The breakdown voltage is rated at 500 V.
Typical Rds(on) is 0.85 mΩ at Vds = 10 V and Id = 2.8 A.