Infineon BSS138W Datasheet

The BSS138W G SIPMOS® small-signal transistor features N-channel, enhancement mode, logic level, dv/dt rated, Pb-free lead-plating; RoHS compliant


Infineon BSS138W Datasheet - cover page
Brand
Infineon
Category
Transistor
Document type
Datasheet
Language
English
Pages
9
File format
PDF
File size
219 KB
Published
06 April, 2012
Updated
30 September, 2023
MD5 checksum
9296495BC8A795B2E43BD33BF0F523AE

About this manual

The BSS138W is an N‑channel enhancement‑mode MOSFET with a 60 V drain‑source voltage rating. It is offered in a PG‑SOT‑323 package and is RoHS‑compliant.

The document provides electrical, thermal, and dynamic characteristics, including maximum ratings, typical on‑state resistance, gate charge, and package dimensions.

What's inside

  • Product Summary
  • Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Dynamic Characteristics
  • Gate Charge Characteristics
  • Power Dissipation
  • Safe Operating Area
  • Typical Output Characteristics
  • Package Outline

Frequently asked questions

What package does the BSS138W use?

It is supplied in a PG‑SOT‑323 surface‑mount package.

Download PDF (219 KB)

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