IKW15T120 is a high power IGBT module from Infineon, using NPT technology, with low EMI, low gate charge, low loss, short circuit withstand time of 10 microseconds, very soft, fast recovery anti-parallel EmCon HE diode, etc., suitable for frequency converters and uninterruptible power supplies.
The IKW15T120 is a 1200 V, 15 A IGBT from Infineon's TrenchStop® series, designed for frequency converters and UPS applications. It features low loss, low EMI, low gate charge and a fast‑recovery anti‑parallel diode, offering tight parameter distribution and high ruggedness.
Key specifications include a collector‑emitter voltage of 1200 V, a continuous collector current of 15 A, power dissipation of 110 W at 25 °C, and a junction‑to‑case thermal resistance of 1.1 K/W. Switching characteristics such as turn‑on delay (≈50 ns) and turn‑off delay (≈560 ns) are also detailed.
| Collector‑emitter voltage (VCE) | 1200 V |
|---|---|
| Continuous collector current (IC) | 15 A |
| Gate‑emitter voltage (VGE) | +20 V |
| Power dissipation (P_R) | 110 W |
| Junction‑to‑case thermal resistance (RthJC) | 1.1 K/W |
| Turn‑on energy (Eon) | 1.3 mJ |
The IKW15T120 can withstand up to 1200 V between collector and emitter.
The device is rated for a continuous collector current of 15 A.
It can dissipate up to 110 W at a case temperature of 25 °C.
The junction‑to‑case thermal resistance is 1.1 K/W.