The BAS21 is a silicon switching diode from ON Semiconductor that is characterized by its high switching speed and high breakdown voltage.
The BAS21 series are high‑speed silicon switching diodes offered in several package types (SOT‑23, SOD‑323, and parallel‑triple). The document provides maximum ratings, electrical and thermal characteristics, and detailed package dimensions for the BAS21, BAS21‑03W, and BAS21U variants.
Key data include reverse voltage, forward current limits, surge capabilities, thermal resistance, and permissible pulse loads. Package outlines, marking codes, and standard reel packaging information are also listed for design and procurement purposes.
| Reverse voltage (V_RRM) | 200 V |
|---|---|
| Peak reverse voltage (V_RM) | 250 V |
| Forward current (I_F) | 250 mA |
| Peak forward current (I_FM) | 625 mA |
| Surge forward current (10 µs) | 4 A |
| Power dissipation (P_D) | 350 mW (BAS21) |
| Junction temperature (T_J) | 150 °C |
| Storage temperature range | -65 to 150 °C |
| Reverse recovery time (t_rr) | 50 ns |
| Diode capacitance (C_j) | 5 pF |
| Thermal resistance (junction‑to‑case) | ≤ 105 K/W (BAS21‑03W) |
The BAS21 diode can withstand a reverse voltage of up to 200 V.
The peak forward current is specified as 625 mA.
The reverse recovery time is about 50 ns.
The capacitance is approximately 5 pF.