This document introduces the characteristics and parameters of Panasonic 1200V 600A IGBT.
The SPDO3N60C3 and SPU03N60C3 are high‑voltage, low‑gate‑charge MOSFET power transistors designed for demanding applications. They feature a 850 V maximum drain‑source voltage, ultra‑low gate charge, and high peak current capability, making them suitable for fast switching and high‑efficiency power conversion.
The document lists absolute maximum ratings, thermal characteristics, and typical electrical performance curves, including continuous and pulsed drain currents, on‑state resistance, gate charge, and switching loss data. Package dimensions, recommended soldering conditions, and safety notices are also provided.
| Continuous drain current (Id) | 3.2 A (Tj = 25 °C) |
|---|---|
| Power dissipation (Pd) | 38 W (Tj = 25 °C) |
| Operating temperature range | -55 °C to +150 °C |
| Soldering temperature (Told) | 260 °C |
The device can handle a continuous drain current of 3.2 A at a junction temperature of 25 °C.
The single‑pulse avalanche energy rating is 100 mJ.
A soldering temperature of up to 260 °C is specified.
The static gate‑source voltage limit is +20 V.