Infineon BSP135 Small‑Signal Transistor Datasheet

BSP135 SIPMOS® is a N-channel, depletion mode, dv/dt rated small-signal transistor with a maximum rating of T j=25°C, unless otherwise specified.


Infineon BSP135 Small‑Signal Transistor Datasheet - cover page
Brand
Infineon
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
10
File format
PDF
File size
211 KB
Published
06 April, 2012
Updated
30 September, 2023
MD5 checksum
61DC1FAC07EB2881D70D15A35F55894F

About this manual

The BSP135 is an N‑channel depletion‑mode small‑signal transistor offered by Infineon in a SOT‑223 package. The datasheet lists its electrical, thermal and dynamic characteristics, as well as maximum ratings and safe‑operating‑area information.

Key parameters include a continuous drain current of 0.12 A, a pulsed drain current of 0.48 A, a drain‑source breakdown voltage of 600 V, a maximum power dissipation of 1.8 W at 25 °C, and an operating temperature range from –55 °C to 150 °C. Package dimensions and footprint details are also provided.

What's inside

  • Product Summary
  • Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Dynamic Characteristics
  • Power Dissipation
  • Safe Operating Area
  • Package Outline
  • Dimensions
  • Legal Notice

Specifications

Continuous drain current (Id)0.12 A
Pulsed drain current (Id,pulse)0.48 A
Gate‑source voltage (Vgs max)+20 V
Power dissipation (Pd) at 25 °C1.8 W
Package typeSOT‑223

Frequently asked questions

What is the maximum continuous drain current of the BSP135?

The BSP135 can conduct a continuous drain current of 0.12 A at 25 °C.

What package does the BSP135 use?

The device is supplied in a SOT‑223 surface‑mount package.

What is the maximum power dissipation of the BSP135?

The maximum power dissipation is 1.8 W at a case temperature of 25 °C.

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