This is Infineon's datasheet (Rev. 2.6, 2007-12-14) for the SPB11N60C3, a Cool MOS power transistor in a PG-TO263 package with ordering code Q67040-S4396. It lists the device's features, maximum ratings and thermal characteristics, followed by electrical characteristics such as breakdown voltage, on-state resistance, capacitances and gate charge.
The remaining pages give typical characteristic curves (power dissipation, safe operating area, transient thermal impedance, output characteristics, on-resistance, transfer characteristics, gate charge, body diode forward characteristics and switching times) and the PG-TO263 package outline and footprint dimensions in millimeters and inches.
| Package | PG-TO263 |
|---|---|
| Ordering code | Q67040-S4396 |
| Drain-source on-state resistance RDS(on) | 0.38 Ω max at Tj = 25 °C |
| Drain-source breakdown voltage | 600 V min (VGS = 0 V, ID = 0.25 mA) |
| Gate source voltage (static) | ±20 V |
| Power dissipation (TC = 25 °C) | 125 W |
| Operating and storage temperature | -55...+150 °C |
| Avalanche energy, single pulse | 340 mJ |
| Thermal resistance, junction - case | 1 K/W max |
| Total gate charge | 45 nC typ, 60 nC max |
The minimum drain-source breakdown voltage is 600 V at VGS = 0 V and ID = 0.25 mA.
It is supplied in a PG-TO263 package with ordering code Q67040-S4396.
The operating and storage temperature range is -55 to +150 °C.
The static gate-source voltage rating is ±20 V; for AC (f > 1 Hz) it is ±30 V.