This document describes the features and characteristics of IPD60R520CP CoolMOSTM power transistor, including lowest figure-of-merit RON x Qg, ultra low gate charge, extreme dv/dt rating, high peak current capability, etc.
The IPD60R520CP is a CoolMOS power transistor from Infineon Technologies, designed for hard‑switching SMPS topologies. It features ultra‑low gate charge, high peak current capability, and is RoHS‑compliant in a PG‑TO252 package.
The document provides detailed electrical, thermal, and dynamic characteristics, including maximum ratings, typical output curves, gate‑charge data, and package dimensions, along with safety and legal notices.
| Continuous drain current (Id) | 6.8 A |
|---|---|
| Pulsed drain current (Idp) | 17 A |
| On‑state resistance (Rds(on)) typical | 0.47 Ω |
| Gate charge total (Qg) | 24‑31 nC |
| Avalanche energy (single pulse) | 166 mJ |
| Operating temperature range | -55 °C to 150 °C |
| Package type | PG‑TO252 |
The maximum continuous drain current is 6.8 A at 25 °C.
It is supplied in a PG‑TO252 surface‑mount package.
The device can operate from –55 °C up to 150 °C.
Typical Rds(on) is about 0.47 Ω at 25 °C.