IPA60R520CP CoolMOSTM power transistor features the lowest RON x Qg figure-of-merit, ultra-low gate charge, extreme dv/dt rating and high peak current capability. It is qualified according to JEDEC1) for target applications and complies with RoHS.
The IPA60R520CP is a CoolMOS power transistor designed for hard‑switching SMPS topologies. It offers a low figure‑of‑merit (Rds·Q), ultra‑low gate charge, high peak current capability, and is RoHS‑compliant.
The document lists maximum ratings, thermal and electrical characteristics, dynamic switching parameters, gate‑charge data, and package dimensions for the PG‑TO220 FP package. It also includes safe operating area curves, power‑dissipation limits, and legal disclaimer information.
| Continuous drain current (Id) | 6.8 A |
|---|---|
| Pulsed drain current (Ipp) | 17 A |
| Avalanche energy (single pulse) | 166 mJ |
| Drain‑source on‑state resistance (Rds(on)) typical | 0.47 Ω |
| Gate threshold voltage (Vgs(th)) typical | 3 V |
| Input capacitance (Ciss) typical | 630 pF |
| Output capacitance (Coss) typical | 32 pF |
| Total gate charge (Qg) typical | 31 nC |
| Maximum power dissipation (Pd) at 25 °C | 30 W |
| Package | PG‑TO220 FP |
The continuous drain current is rated at 6.8 A at a junction temperature of 25 °C.
The typical drain‑source on‑state resistance is 0.47 Ω at 25 °C.
It is supplied in a PG‑TO220 FP (fully isolated) package.