SPP1413A is a P-Channel enhancement mode MOSFET produced using high cell density DMOS trench technology. It features low on-state resistance and is suitable for low voltage applications such as power management in cellular phones, notebook computers, and battery powered circuits.
The SPP1413A is a P‑Channel logic enhancement mode power MOSFET designed for low‑voltage applications such as notebook power management, battery‑powered equipment, DC‑DC converters and load switches. Its high‑density DMOS trench process minimizes on‑state resistance, making it suitable for high‑side switching in compact surface‑mount packages.
Key electrical parameters include a drain‑source voltage rating of –20 V, a gate‑source rating of +12 V, and typical on‑resistance as low as 0.130 Ω. The device is supplied in a SOT‑353 (SC‑70) package and provides a total gate charge of 4.8 nC. Detailed characteristics, pin descriptions and ordering information are provided in the following sections.
| Drain‑Source Voltage (V_DSS) | -20 V |
|---|---|
| Gate‑Source Voltage (V_GSS) | +12 V |
| Continuous Drain Current (T=150 °C) | -1.7 A |
| Pulsed Drain Current | -6 A |
| On‑Resistance (R_DS(on)) typical | 0.130 Ω @ V_GS=-4.5 V, I_D=-3.4 A |
| Total Gate Charge (Q_g) | 4.8 nC |
| Package | SOT‑353 (SC‑70) |
The maximum drain‑source voltage is –20 V.
It is supplied in a SOT‑353 (SC‑70) surface‑mount package.
Typical on‑resistance is 0.130 Ω at V_GS = ‑4.5 V and I_D = ‑3.4 A.