SPP3401B is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
The SPP3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
SPP3403 is a P-Channel logic enhancement mode power field effect transistor produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
The SPP3403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
This document describes the features and applications of the SPP3407 P-Channel Enhancement Mode MOSFET product, which is suitable for low voltage applications such as cellphone, notebook computer power management, and other battery powered circuits.
SPP1413A is a P-Channel enhancement mode MOSFET produced using high cell density DMOS trench technology. It features low on-state resistance and is suitable for low voltage applications such as power management in cellular phones, notebook computers, and battery powered circuits.
The SPP1305 is a P-channel logic enhancement mode power field effect transistor, produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. Features: Super high density cell design for extremely low RDS(ON), Exceptional on-resistance and maximum DC current capability, SOT-323 (SC-70) package design.
SPP1413 is a P-channel logic enhancement mode power field effect transistor produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
The SPP1413A is a P-Channel enhancement mode MOSFET power field effect transistor produced using high cell density DMOS trench technology. These devices are particularly suited for low voltage applications such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed.
The SPP1413 is a P-Channel enhancement mode power MOSFET produced using high cell density DMOS trench technology. It is particularly suitable for low voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low power loss. It features a super high density cell design for extremely low on-resistance and maximum DC current capability. The package is SOT-323 (SC-70).
