The SPP3403 is a P‑Channel logic enhancement mode power MOSFET built with a high‑density DMOS trench process to achieve very low on‑state resistance. It is intended for low‑voltage applications such as notebook power management, portable equipment, battery‑powered systems, DC‑DC converters, load switches, and LCD inverter circuits.
The datasheet lists the device's absolute maximum ratings, electrical characteristics, typical performance curves, and the SOT‑23‑3L package dimensions. Key parameters include a drain‑source voltage of –30 V, a gate‑source voltage rating of +12 V, and a typical on‑resistance as low as 0.130 Ω.
| Drain‑Source Voltage (Vdss) | -30 V |
|---|---|
| Gate‑Source Voltage (Vgss) | +12 V |
| Continuous Drain Current (Id) @ 25 °C | -2.8 A |
| On‑Resistance (Rds(on)) typical | 0.130 Ω |
| Gate Threshold Voltage (Vth) typical range | -0.4 V to -1.0 V |
The SPP3403 is supplied in an SOT‑23‑3L surface‑mount package.
The device can withstand a drain‑source voltage of up to –30 V.
Typical Rds(on) is 0.130 Ω at Vgs = ‑2.5 V and Id = ‑1.5 A.