SPP21N50C3, SPB21N50C3 SPI21N50C3, SPA21N50C3 are the latest high-performance power transistors launched by Dinghao. It has the characteristics of ultra-low RDS(on), ultra-low gate charge, extreme dv/dt rating, ultra-low effective capacitance, improved transconductance, etc.
The Infineon SPP21N50C3, SPB21N50C3, SPI21N50C3 and SPA21N50C3 are Cool MOS™ power transistors designed for high‑voltage applications up to 560 V. The document provides maximum ratings, electrical characteristics, thermal data and typical performance curves for the devices in TO‑220, TO‑263 and FullPAK packages.
Key parameters include a continuous drain current of 21 A at 25 °C, ultra‑low gate charge, and a rated avalanche energy of 690 mJ. The datasheet also lists thermal resistance values, transient thermal impedance, and detailed gate‑charge curves to aid in circuit design and reliability analysis.