This document describes the features and characteristics of four Cool MOS™ power transistors: SPP21N50C3, SPB21N50C3, SPI21N50C3, SPA21N50C3. These features include new high voltage technology, worldwide best RDS(on), ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra-low effective capacitance, and improved transconductance.
The Infineon SPP21N50C3 is a 560 V Cool MOS™ power transistor with ultra‑low gate charge and high transconductance. The document provides maximum ratings, thermal characteristics, electrical parameters and typical performance curves for the device in TO‑220, TO‑262 and TO‑263 packages.
Key sections include maximum drain current, breakdown voltage, gate threshold, power dissipation limits, and avalanche energy specifications, together with transient thermal impedance graphs and typical output characteristics.
| Maximum Continuous Drain Current (25 °C) | 21 A |
|---|---|
| Power Dissipation (Tc = 25 °C) | 208 W |
The device can handle a continuous drain current of 21 A at 25 °C.
It can dissipate up to 208 W when the case temperature is 25 °C.