SPP20N60C2, SPB20N60C2 SPA20N60C2 is a new type of high voltage power transistor launched by Dinghao Electronics. It has the best RDS(on) in the world, ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, and ultra-low effective capacitance.
This datasheet describes the Infineon SPP20N60C2 (and its SPB/SPA variants), a high‑voltage Cool MOS power transistor designed for demanding applications. It includes feature summaries, maximum ratings, thermal characteristics, and detailed electrical parameters.
Key specifications include a continuous drain current of 20 A at 25 °C, a drain‑source breakdown voltage of 600 V, typical on‑state resistance of 0.16 Ω, and a power dissipation rating of 208 W at 25 °C. Thermal resistance values, transient thermal impedance curves, and safe‑operating‑area graphs are also provided.
| Continuous drain current (Id) at 25 °C | 20 A |
|---|---|
| Power dissipation at 25 °C (Pd) | 208 W |
The device can carry a continuous drain current of 20 A at 25 °C.
The transistor can dissipate up to 208 W at a case temperature of 25 °C.