This document describes the features and characteristics of the SPW24N60C3 CoolMOSTM power transistor, including new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rated, extreme dv / dt rated, ultra low effective capacitances, improved transconductance.
This datasheet describes the Infineon SPW24N60C3 CoolMOS power transistor, highlighting its high‑voltage technology, low gate charge, and ultra‑low effective capacitances. Key features such as a maximum drain‑source voltage of 600 V and a low on‑state resistance are listed.
The document includes detailed electrical and thermal specifications, dynamic characteristics, reverse‑diode parameters, and typical safe‑operating‑area curves. Package information (P‑TO247) and dimensional data are also provided for designers.
| Continuous drain current (Id) at 25 °C | 24.3 A |
|---|---|
| Maximum on‑state resistance (Rds(on)) | 0.16 Ω |
| Power dissipation at 25 °C | 240 W |
| Input capacitance (Ciss) | 2800 pF |
| Total gate charge (Qg) | 105‑137 nC |
The maximum continuous drain current is 24.3 A at 25 °C.
The maximum on‑state resistance (Rds(on)) is 0.16 Ω.
The input capacitance is 2800 pF.
It is supplied in a P‑TO247 package.