This product is a high voltage power transistor, with ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitance and improved transconductance
The SPW35N60C3 is a CoolMOS power transistor offered in a P‑TO247 package. It features ultra‑low gate charge, periodic avalanche rating, extreme dv/dt capability and low effective capacitances, making it suitable for high‑reliability electronic applications.
The document provides comprehensive electrical parameters such as continuous drain current, on‑state resistance, breakdown voltage, as well as thermal characteristics, gate charge data and safe operating area curves. Legal notices and handling warnings are also included.
| On‑state resistance (R_DS(on), max) | 0.1 Ω |
|---|---|
| Thermal resistance junction‑to‑case (R_thJC) | 0.4 K/W |
The maximum on‑state resistance is 0.1 Ω.
The junction‑to‑case thermal resistance is 0.4 K/W.