This document introduces the features and characteristics of the BB639/BB659 silicon variable capacitance diodes, which are suitable for tuning the extended frequency band in VHF TV/VTR tuners. They have high capacitance ratio, low series inductance, low series resistance, excellent uniformity, and matching.
The BB639 and BB659 are silicon variable capacitance diodes intended for tuning extended frequency bands in VHF TV and VTR tuners. They feature a high capacitance ratio, low series inductance and resistance, and excellent uniformity due to an in‑line matching assembly procedure.
The data sheet lists maximum ratings such as a reverse voltage of 30 V, peak reverse voltage of 35 V, forward current of 20 mA, and an operating temperature range of –55 °C to 150 °C. Electrical characteristics include diode capacitance values (e.g., 36‑40 pF at 1 V, 1 MHz) and capacitance ratios up to 14.7, with detailed temperature coefficients provided.
| Reverse voltage (Ve) | 30 V |
|---|---|
| Peak reverse voltage (Vem) | 35 V |
| Forward current (If) | 20 mA |
| Operating temperature range | -55 °C to 150 °C |
| Storage temperature range | -55 °C to 150 °C |
| Capacitance at Vp=1 V, f=1 MHz | 36 pF (min) – 40 pF (max) |
| Capacitance ratio (Cry/Cr2g) | 13.5 – 14.7 |
The maximum reverse voltage (Ve) is 30 V.
They operate from –55 °C up to 150 °C.
Typical capacitance is about 38.3 pF (range 36 pF to 40 pF).
The forward current rating is 20 mA.