SPW24N60C3 is a CoolMOSTM power transistor with revolutionary high voltage technology, ultra low gate charge, periodic avalanche rating, extreme dv /dt rating, ultra low effective capacitances and improved transconductance.
The SPW24N60C3 CoolMOS™ Power Transistor is presented with its key features such as ultra‑low gate charge, low on‑state resistance and high voltage capability. The datasheet lists the package type (P‑TO247), ordering code, and maximum ratings including continuous and pulsed drain currents, avalanche energy and power dissipation.
Detailed electrical characteristics cover static parameters (breakdown voltage, gate threshold, on‑state resistance), dynamic behavior (input/output capacitances, gate charge, switching times) and thermal data (junction‑case resistance, thermal impedance). Mechanical dimensions, reverse‑diode specifications and safe operating area curves are also included.
| Continuous drain current (Id) @ 25 °C | 24.3 A |
|---|---|
| Pulsed drain current (Id,pulse) @ 25 °C | 72.9 A |
| Maximum on‑state resistance (Rds(on)) | 0.16 Ω |
| Input capacitance (Ciss) | 2800 pF |
| Output capacitance (Coss) | 930 pF |
| Reverse recovery time (trr) | 600 ns |
| Power dissipation (Pd) @ 25 °C | 240 W |
| Operating temperature range | -55 °C to 150 °C |
| Gate threshold voltage (Vgs(th)) typical | 3.9 V |
| Avalanche energy (single pulse) | 780 mJ |
The maximum continuous drain current is 24.3 A at 25 °C.
The maximum on‑state resistance is 0.16 Ω.
It is supplied in a P‑TO247 package.
It can operate from –55 °C up to 150 °C.