The SPW35N60CFD CoolMOSTM power transistor features new revolutionary high voltage technology, intrinsic fast-recovery body diode, extremely low reverse recovery charge, ultra low gate charge, extreme dv/dt rating, high peak current capability, periodic avalanche rating, etc.
The document provides a detailed product summary for the Infineon SPW35N60CFD CoolMOS power transistor, including its key features, package information, and ordering codes. It lists maximum ratings, thermal characteristics, and electrical specifications such as drain current, breakdown voltage, and gate thresholds.
Additional sections cover dynamic characteristics like capacitances, turn‑on/off times, gate charge, as well as safe operating area, power dissipation curves, and mechanical dimensions. The final pages contain legal notices, contact information, and revision data.
| Continuous drain current (Id) at 25 °C | 34.1 A |
|---|---|
| Input capacitance (Ciss) | 5060 pF |
| Output capacitance (Coss) | 1400 pF |
| Turn‑on delay time | 20 ns |
| Power dissipation at 25 °C | 313 W |
The maximum continuous drain current is 34.1 A at 25 °C.
The input capacitance is 5060 pF.
The device can dissipate up to 313 W at 25 °C.