Infineon SPW52N50C3 Cool MOS Power Transistor Datasheet

This document is about SPW52N50C3 technical information. It mainly introduces the features and characteristics of the product, including RDS(on), ID, Avalanche energy, EAS, Avalanche current, IAR, Gate source voltage, VGS, Power dissipation, Tj, Tstg, dv/dt, RthJC, RthJA, Tsold.


Infineon SPW52N50C3 Cool MOS Power Transistor Datasheet - cover page
Brand
Infineon
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
11
File format
PDF
File size
257 KB
Published
05 April, 2012
Updated
30 September, 2023
MD5 checksum
4666EC2ED9769E193D75CF7BD1274E35

About this manual

The SPW52N50C3 is Infineon's Cool MOS™ power transistor featuring ultra‑low gate charge, low capacitances, and high voltage capability. It is offered in a P‑TO‑247 package and is intended for high‑power applications requiring fast switching and robust avalanche performance.

The document lists detailed maximum ratings, thermal characteristics, and a full set of electrical parameters such as breakdown voltage, drain current limits, capacitances, and gate charge. These data help designers evaluate the device for use in power converters, motor drives, and other high‑voltage, high‑current circuits.

What's inside

  • Feature
  • Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Typ. output characteristic
  • Typ. gate charge
  • Avalanche SOA
  • Forward characteristics of body diode
  • Avalanche energy
  • Package dimensions

Specifications

Pulsed drain current (Tmax limited)156 A
Operating temperature range-55 °C to +150 °C
Package typeP‑TO‑247

Frequently asked questions

What is the operating temperature range of the device?

The transistor is rated for operation from –55 °C up to +150 °C.

Which package does the SPW52N50C3 use?

It is supplied in a P‑TO‑247 (P‑TO‑247‑3‑1) package.

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