K4S280832B is a CMOS SDRAM produced by Samsung Electronics. This datasheet introduces the pin definition, function description, working principle and other information of this product.
The K4S280832B is a 128‑Mbit synchronous CMOS SDRAM organized as 4M × 8 bits with four banks. It operates with a 3.3 V LVTTL interface and supports multiple burst lengths and CAS latency settings.
The document details absolute maximum ratings, recommended DC and AC operating conditions, pin‑out for the 54‑pin TSOP package, timing diagrams, IBIS models, and a simplified truth table for command encoding.
| Memory density | 128 Mbit |
|---|---|
| Organization | 4M × 8 bit × 4 banks |
| Supply voltage (typical) | 3.0 V – 3.6 V |
| Power dissipation | 1 W |
| Input voltage levels (AC test) | Vih = 2.4 V, Vil = 0.4 V |
| CAS latency options | 2 or 3 |
| Package pin pitch | 0.8 mm |
The device is typically powered at 3.3 V, with a recommended range of 3.0 V to 3.6 V.
The SDRAM can be configured for CAS latency of 2 or 3.
The pins are spaced at 0.8 mm pitch.