This document describes the features and characteristics of the K4S280432B CMOS SDRAM product, including its organization, operating frequency range, programmable burst length, and latency. The product has high data transfer rate and high performance, making it suitable for various high bandwidth, high performance memory system applications.
This document describes the Samsung K4S280432B 128‑Mbit CMOS SDRAM. It includes the memory organization, functional block diagram, pin layout, and detailed electrical characteristics for designers.
Key sections cover absolute maximum ratings, DC and AC operating conditions, IBIS specifications, and command timing tables, allowing engineers to integrate the part into high‑performance memory systems.
| Memory density | 128 Mbit |
|---|---|
| Organization | 8M x 4‑bit x 4 banks |
| Supply voltage (Vop, Vopa) | 3.0 V min / 3.3 V typ / 3.6 V max |
| Storage temperature range | -55 °C to +150 °C |
| Power dissipation | 1 W |
| Package | 54‑pin TSOP |
The device operates with a supply voltage of 3.0 V minimum, 3.3 V typical, and 3.6 V maximum.
It is organized into four banks.
The storage temperature range is –55 °C to +150 °C.