This document is a technical specification for K4S280432F/K4S280832F/K4S281632F, which introduces the features and characteristics of the product, including storage capacity, interface, package, etc.
This document provides the preliminary specifications for Samsung's 128 Mb F‑die CMOS SDRAM devices, covering the x4, x8 and x16 configurations. It includes features, organization, package details, pin configuration, absolute maximum ratings and detailed DC operating conditions.
The datasheet also contains functional block diagrams, timing tables, clamp current characteristics and a simplified truth table for command decoding, enabling designers to integrate the memory into high‑performance systems.
| Supply voltage (VDD, VDDQ) | 3.0 V min / 3.3 V typ / 3.6 V max |
|---|---|
| Operating temperature range | -55 °C to +150 °C |
| Package type | 54‑pin TSOP |
| Refresh period | 64 ms (4K cycle) |
The device operates with a supply voltage of 3.0 V minimum, 3.3 V typical, and 3.6 V maximum.
It is rated for storage temperatures from –55 °C up to +150 °C.
The memory is supplied in a 54‑pin TSOP package.