This document is a preview version of SAMSUNG 128Mb F-die SDRAM Specification, which provides detailed information on the features and characteristics of the product
This document provides the detailed specifications of Samsung's 128 Mb F‑die CMOS SDRAM family (x4, x8, x16). It includes features such as JEDEC‑standard 3.3 V operation, four‑bank architecture, selectable CAS latency and burst lengths, and self‑refresh capabilities. The datasheet lists part numbers K4S280432F, K4S280832F and K4S281632F with their organization, maximum frequency and package type.
Key sections cover ordering information, package dimensions, functional block diagram, pin configuration, absolute maximum ratings, DC operating conditions, capacitance, and command timing tables. The information is intended for designers and engineers integrating these memory devices into high‑performance systems.
| Supply voltage (VDD) | 3.0 V – 3.6 V |
|---|---|
| Package type | 54‑pin TSOP |
| Refresh period | 64 ms (4K cycles) |
| Storage temperature range | -55 °C to +150 °C |
| Power dissipation | 1 W |
The device operates from 3.0 V to 3.6 V supply voltage.
It is supplied in a 54‑pin TSOP package.
The SDRAM can be stored from –55 °C to +150 °C.