This document introduces three SDRAM products, namely K4S280432E, K4S280832E, and K4S281632E. They are synchronous high data rate Dynamic RAMs fabricated with Samsung's high performance CMOS technology. These products feature precise cycle control and programmable burst length and latencies, making them suitable for a variety of high bandwidth, high performance memory systems.
The Samsung 128Mb E-die SDRAM Specification Manual provides detailed electrical, timing, and mechanical data for the 128‑megabit E‑die SDRAM devices in x4, x8, and x16 configurations.
Key features include JEDEC‑standard 3.3 V operation, four‑bank architecture, selectable burst lengths, and auto/self‑refresh. The document lists pin configurations, absolute maximum ratings, and command timing tables for designers.
| Supply voltage | 3.0 V – 3.6 V (typ 3.3 V) |
|---|---|
| Maximum operating frequency (x16) | 166 MHz |
| Package type | 54‑pin TSOP |
| Refresh period | 64 ms (4K cycles) |
| Power dissipation | 1 W |
The device operates from 3.0 V minimum to 3.6 V maximum, with a typical value of 3.3 V.
The x16 version supports up to 166 MHz.
It is supplied in a 54‑pin TSOP package.
The SDRAM uses a 64 ms refresh period (4K cycles).