The K4S643233H is a high-performance synchronous dynamic random access memory (SDRAM) manufactured by Samsung. It can operate in a temperature range of -25°C to 85°C. The device has a variety of programmable features, such as operating frequency, burst length, and latency, which make it suitable for use in a variety of high-bandwidth and high-performance memory system applications.
This datasheet describes the K4S643233H Mobile SDRAM, a 512K × 32‑bit device organized in four banks and offered in a 90‑ball FBGA package. It lists features such as 3.0 V/3.3 V supply options, multiple burst lengths, CAS latencies, and special functions like Partial Array Self‑Refresh and internal Temperature‑Compensated Self‑Refresh.
The document includes absolute maximum ratings, recommended DC and AC operating conditions, pin‑out diagrams, timing parameters, power‑up sequence, and burst‑sequence examples. It also details temperature ranges for commercial (‑25 °C ~ 70 °C) and extended (‑25 °C ~ 85 °C) operation, as well as refresh periods and power consumption figures.
| Capacity | 512K × 32‑bit × 4 banks |
|---|---|
| Supply Voltage (Vbb) | 2.7 V – 3.6 V |
| Operating Temperature (Commercial) | -25 °C ~ 70 °C |
| Operating Temperature (Extended) | -25 °C ~ 85 °C |
| Package | 90‑ball FBGA, 0.8 mm pitch |
| Maximum Frequency | 166 MHz (F(H)E/N/G/C/L/F60 version) |
| Refresh Period | 64 ms |
| Absolute Maximum Pin Voltage | -1.0 V ~ +46 V |
| Power Dissipation | 1.0 W |
The device operates with a supply voltage (Vbb) between 2.7 V and 3.6 V.
The memory is supplied in a 90‑ball FBGA package with a 0.8 mm ball pitch.
The highest listed frequency is 166 MHz for the F(H)E/N/G/C/L/F60 version.