K4S643233H is a synchronous high data rate dynamic random access memory produced by Samsung. It has a storage capacity of 67,108,864 bits and is organized as 4 x 524,288 words by 32 bits. It is manufactured using Samsung's high-performance CMOS technology. The memory supports 3.0V and 3.3V power supplies and can operate in commercial temperature range of -25℃~70℃ and extended temperature range of -25℃~85℃.
This document describes the Samsung K4S643233H Mobile‑SDRAM, a 512 K × 32‑bit (4‑bank) synchronous DRAM offered in a 90‑ball FBGA package. It lists the device features such as 3.0 V/3.3 V operation, selectable CAS latency (1‑3), burst lengths (1, 2, 4, 8, full page), and special functions like PASR and internal temperature‑compensated self‑refresh.
The datasheet includes electrical characteristics, absolute maximum ratings, AC and DC operating conditions, pin‑out diagrams, timing parameters, power‑up sequence, and burst‑mode operation. Temperature ranges are given for commercial (‑25 °C to 70 °C) and extended (‑25 °C to 85 °C) grades, and the refresh period is 64 ms (4K cycles).
| Memory organization | 512K × 32 bit × 4 banks |
|---|---|
| Package type | 90‑ball FBGA, 0.8 mm pitch |
| Supply voltage (Vbb) | 2.7 V – 3.6 V |
| Maximum operating frequency | 166 MHz |
| CAS latency options | 1, 2, 3 |
| Burst length options | 1, 2, 4, 8, full page |
| Temperature range (commercial) | -25 °C to 70 °C |
| Temperature range (extended) | -25 °C to 85 °C |
| Refresh period | 64 ms (4K cycle) |
| Power dissipation | 1.0 W |
The device operates with a supply voltage (Vbb) between 2.7 V and 3.6 V.
Commercial grade works from –25 °C to 70 °C, while extended grade works from –25 °C to 85 °C.
The refresh period is 64 ms, corresponding to a 4K cycle.
The part is supplied in a 90‑ball FBGA package.