K4S643233F-S(D)E/N/I/P is a 2Mx32 SDRAM memory produced by Samsung. It works at a voltage of 3.0V / 3.0V or 3.3V / 3.3V and is packaged in a 90FBGA package.
The K4S643233F-S(D)E/N/I/P is a 512K × 32‑bit × 4‑bank CMOS SDRAM offering 3.0 V and 3.3 V operation, extended and industrial temperature ranges, and up to 133 MHz clock speeds. It is fabricated with Samsung's high‑performance CMOS technology and is intended for high‑bandwidth memory subsystems.
The document details absolute maximum ratings, DC and AC operating conditions, package dimensions, pin assignments, timing parameters, and command definitions. It also includes electrical characteristics such as supply voltage, input/output logic levels, power dissipation, and refresh requirements.
| Memory organization | 512K × 32 bit × 4 banks |
|---|---|
| Package type | 90‑Ball FBGA |
| Supply voltage | 3.0 V / 3.3 V |
| Maximum operating frequency | 133 MHz (CL=3) |
| Extended temperature range | -25 °C to 85 °C |
| Industrial temperature range | -40 °C to 85 °C |
| Power dissipation | 1 W |
| Refresh period | 64 ms (4K cycle) |
| Input logic high voltage | 2.2 V |
| Output logic low voltage | 0.4 V |
It operates from 3.0 V to 3.3 V (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V).
The device supports an extended range of –25 °C to 85 °C and an industrial range of –40 °C to 85 °C.
It is supplied in a 90‑ball FBGA package.
The part can run up to 133 MHz when CAS latency is 3.