The K4S643233F is a 67,108,864-bit synchronous dynamic random access memory (SDRAM) produced by Samsung. It is organized as 4 x 524,288 words by 32 bits and supports 3.0V and 3.3V power supplies, LVCMOS compatibility, multiplexed addresses, and four-way operations.
The K4S643233F-S(D)E/N/I/P is a 512K × 32‑bit × 4‑bank CMOS SDRAM offering 3.0 V and 3.3 V operation with extended (‑25 °C to 85 °C) and industrial (‑40 °C to 85 °C) temperature ranges. It supports multiple burst lengths, CAS latencies and a maximum frequency of 133 MHz (CL = 3).
The document lists ordering information, package dimensions (90‑ball FBGA), absolute maximum ratings, DC and AC operating conditions, timing parameters, and a simplified truth table for command encoding. These data help designers integrate the part into high‑performance memory subsystems.
| Memory organization | 512K × 32 bit × 4 banks |
|---|---|
| Supply voltage | 3.0 V / 3.3 V |
| Operating temperature (extended) | -25 °C to 85 °C |
| Operating temperature (industrial) | -40 °C to 85 °C |
| Maximum clock frequency | 133 MHz (CL = 3) |
| Package type | 90‑ball FBGA |
| Power dissipation (max) | 1 W |
| Refresh period | 64 ms (4K cycles) |
The part operates from either 3.0 V or 3.3 V supplies.
It can operate from –25 °C to 85 °C in extended mode and from –40 °C to 85 °C in industrial mode.
The maximum clock frequency is 133 MHz when CAS latency is set to 3.
It is supplied in a 90‑ball FBGA package.