STP6NB80 is a N-channel power MOSFET produced by STMicroelectronics. Its maximum on-resistance is 1.6 ohms, maximum voltage is 800V, and maximum current is 5.7A. It is used in high-frequency high-voltage switching, SMPS, DC-AC converters, welding equipment and UPS.
The STP6NB80 and STP6NB80FP are 800 V N‑channel power MOSFETs built with STMicroelectronics' high‑voltage MESH OVERLAY™ process. They feature extremely low on‑resistance, high avalanche capability, and minimized gate charge, making them suitable for high‑current, high‑speed switching applications.
Key specifications include a continuous drain current of 5.7 A at 25 °C, a typical RDS(on) of 1.6 mΩ, and a total dissipation rating of up to 125 W (STP6NB80) or 40 W (STP6NB80FP). The devices are offered in TO‑220 and TO‑220FP packages with detailed thermal resistance and mechanical dimensions provided for design integration.
| Maximum Avalanche Current | 5.7 A |
|---|---|
| Storage Temperature Range | -65 °C to 150 °C |
| Maximum Junction Temperature | 150 °C |