The STP6NB90/STP6NB90FP is an advanced family of power MOSFETs from STMicroelectronics with outstanding performances, featuring a typical RDS(on) = 1.7 ohm, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. Applications include high current, high speed switching, switch mode power supplies (SMPS), DC-AC converters for welding equipment and uninterruptible power supplies and motor drive.
The STP6NB90 and STP6NB90FP are high‑voltage PowerMESH™ MOSFETs designed for high‑current, high‑speed switching applications. They feature an advanced strip layout and edge termination that provide low on‑resistance, high avalanche capability, and minimized gate charge.
The datasheet provides full electrical characteristics (900 V drain‑source rating, 5.8 A continuous drain current, 23 A pulsed current, 1.7 mΩ typical RDS(on)), thermal data (junction‑to‑case resistance 1.08 °C/W for TO‑220), mechanical dimensions, and recommended applications such as SMPS, welding converters, UPS, and motor drives.
| Drain‑source Voltage (VDS) | 900 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 5.8 A |
| Pulsed Drain Current (ID,pulse) | 23 A |
| Avalanche Current (IAval) | 5.8 A |
| Storage Temperature Range | -65 °C to 150 °C |
| Maximum Junction Temperature (Tj) | 150 °C |
| Thermal Resistance Junction‑to‑Case (RθJC) | 1.08 °C/W (TO‑220) |
The devices are rated for a maximum drain‑source voltage of 900 V.
It can conduct up to 5.8 A continuously at 25 °C.