M54523P and M54523FP are seven-channel Darlington transistor arrays with clamping diodes. These integrated circuits are made of NPN transistors and have extremely low input current supply and high current driving capability.
The M54523P and M54523FP are seven‑circuit Darlington transistor arrays with integrated clamping diodes, built from NPN transistors for high‑current driving with low input current. They are intended for driving relays, printers, LEDs, lamps and interfacing standard MOS‑bipolar logic.
Key specifications include a maximum collector current of 500 mA per circuit, a collector‑emitter breakdown voltage of 50 V, and built‑in clamping diodes rated at 500 mA forward current. The device operates from –20 °C to +75 °C, with a power dissipation of up to 1.47 W (P package) or 1.00 W (FP package). Pin configuration provides eight inputs, a common ground, and eight outputs, all sharing a common COM pin.
| Units | 7‑unit Darlington transistor array |
|---|---|
| Maximum collector current per circuit | 500 mA |
| Collector‑emitter breakdown voltage (BVceo) | 50 V |
| Clamping diode forward current (IF) | 500 mA |
| Clamping diode reverse voltage (VR) | 50 V |
| Input resistance between bases and pins | 2.7 kΩ |
| Operating temperature range | -20 °C to +75 °C |
| Storage temperature range | -55 °C to +125 °C |
Each circuit can handle up to 500 mA of collector current.
Yes, each output pin has a built‑in clamping diode to the COM pin.
The input voltage should be between –0.5 V and +30 V.
The M54523FP is supplied in a molded small flat package, type 16P2N‑A(FP).