M54530P and M54530FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
The M54530P and M54530FP are seven‑circuit Darlington transistor arrays with integrated clamping diodes, built from NPN transistors for high‑current driving with very low input current. They are intended for applications such as relay drivers, printer interfaces, LED and lamp indication, and MOS‑bipolar logic IC interfaces.
The document provides absolute maximum ratings, recommended operating conditions, electrical and switching characteristics, typical performance curves, and thermal derating data. It also details the package options, with the FP version offered in a molded small flat package for space‑saving designs.
| Breakdown voltage (VCEO) | ≥ 40 V |
|---|---|
| Maximum collector current per circuit | 400 mA |
| Operating temperature range | –20 °C to +75 °C |
| Package type (FP version) | 16P2N‑A(FP) – molded small flat package |
Each circuit can handle up to 400 mA of collector current.
The device has a collector‑emitter breakdown voltage of at least 40 V.
It operates from –20 °C up to +75 °C.
The M54530FP is supplied in a molded small flat package.