M63813P/FP/GP/KP are seven-circuit single transistor arrays with clamping diodes. The circuits are made of NPN transistors and perform high-current driving with extremely low input-current supply. They feature four package configurations, medium breakdown voltage, synchronizing current, clamping diodes, low output saturation voltage, and wide operating temperature range. They are suitable for driving indication elements (LEDs and lamps) with small signals.
The M63813P/FP/GP/KP transistor array provides seven independent NPN switching circuits, each with a 300 mA current capability and an integrated clamping diode. Four package options (P, FP, GP, KP) are offered, and the device operates from –40 °C to +85 °C.
The datasheet includes pin configurations, absolute maximum ratings, recommended operating conditions, electrical and switching characteristics, as well as typical performance curves for duty‑cycle and temperature dependence.
| Collector‑emitter voltage (VCEO) | 0.5 ~ +35 V |
|---|---|
| Collector current per circuit (Ic) | 300 mA |
| Input voltage (VI) | 0.5 ~ +35 V |
| Clamping diode reverse voltage (VR) | 35 V |
| Power dissipation (Pd) – M63813P | 1.47 W |
| Operating temperature range | –40 °C ~ +85 °C |
| Storage temperature range | 55 °C ~ +125 °C |
Each circuit can handle up to 300 mA of collector current.
The device is rated for a collector‑emitter voltage up to 35 V.
Four package configurations are offered: P, FP, GP, and KP.
The transistor array is specified to operate from –40 °C to +85 °C.