The M63806P/FP/KP is an 8-circuit single transistor array made of NPN transistors. The semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
The M63806P/FP/KP series from Mitsubishi Semiconductor provides eight NPN transistor circuits in a single package. Each circuit can handle up to 300 mA collector current, with a maximum collector‑emitter voltage of 35 V and a wide operating temperature range from –40 °C to +85 °C.
Three package options are offered (P, FP, KP) with power dissipation ratings of 1.79 W, 1.10 W, and 0.68 W respectively. The datasheet includes absolute maximum ratings, recommended operating conditions, electrical and switching characteristics, and typical performance curves.
| Collector‑emitter voltage (VCEO) | 0.5 ~ 35 V |
|---|---|
| Collector current per circuit (Ic) | 300 mA |
| Input voltage (VI) | 0.5 ~ 35 V |
| Operating temperature range | –40 °C to +85 °C |
| Power dissipation (P) – P package | 1.79 W |
| Power dissipation (P) – KP package | 0.68 W |
| Collector‑emitter saturation voltage (VCE(sat)) | typical 0.02 V |
| Breakdown voltage (V(BR)CEO) | 35 V |
Each circuit can handle up to 300 mA of collector current.
The device operates from –40 °C up to +85 °C.
Three package configurations are offered: P, FP, and KP.
The maximum VCEO rating is 35 V.