The MGF1303B is a low‑noise, N‑channel GaAs FET offered by Mitsubishi Semiconductor. It is supplied in a hermetically sealed metal‑ceramic package designed for minimal parasitic losses and suitable for microstrip circuits in S‑ to Ku‑band applications.
The document provides detailed electrical characteristics, absolute maximum ratings, typical performance curves, S‑parameters, and recommended bias conditions, along with safety and usage guidelines for designers.
| Noise Figure (NFmin) | 2.0 dB @ 12 GHz |
|---|---|
| Associated Gain (Gs) | 8 dB @ 12 GHz |
| Gate‑to‑Drain Breakdown Voltage (Vgd) | 100 V |
| Gate‑to‑Source Breakdown Voltage (Vgs) | 100 V |
| Maximum Drain Current (Id) | 80 mA |
| Total Power Dissipation | 240 mW |
| Storage Temperature Range | -55 °C to 175 °C |
The minimum noise figure is 2.0 dB at 12 GHz.
The typical associated gain is 8 dB at 12 GHz.