The MGF1302 is a low‑noise GaAs FET with an N‑channel Schottky gate, designed for S‑to‑X band low‑noise amplifiers and oscillators. Its hermetically sealed metal‑ceramic package provides minimal parasitic loss and is suitable for microstrip circuits.
Key specifications include a noise figure of 1.4 dB at 4 GHz, an associated gain of 11 dB, and rated voltage limits of –6 V for both gate‑to‑drain and gate‑to‑source. Recommended bias conditions are Vps = 3 V with a drain current of 10 mA. The sheet also provides extensive S‑parameter and noise‑parameter data, as well as safety and usage guidelines.
| Noise Figure (max) | 1.4 dB @ 4 GHz |
|---|---|
| Gate‑to‑Drain Voltage | -6 V |
| Gate‑to‑Source Voltage | -6 V |
| Total Power Dissipation (max) | 360 mW |
| Recommended Bias Current | Ip = 10 mA |
It achieves a maximum noise figure of 1.4 dB at 4 GHz.