This document presents the RF characteristics of MGF0913A produced by MITSUBISHI Electric Corporation. The measurement conditions include a W-CDMA modulated signal in the frequency range of 800 to 900 MHz.
The document provides measured RF characteristics of the MGF0913A semiconductor under defined test conditions, including power output versus input power and adjacent channel power. Data are shown for a 850 MHz carrier with a 10 V supply and 0.2 A drain current.
A test fixture schematic and component values used for the measurements are also listed, detailing resistors, capacitors, and inductors required to replicate the test setup.
| Drain Current (IDQ) | 0.2 A |
|---|---|
| Frequency Range Tested | 800 MHz – 900 MHz |
| Test Frequency | 850 MHz |
| R4 Resistor Value | 500 Ω |
A drain current of 0.2 A is used in the test setup.
The data cover the 800 MHz to 900 MHz band.
The plotted curves are measured at a carrier frequency of 850 MHz.