Application Note for RD04HMS2 & RD70HUF2 two-stage amplifier
The document provides an overview of the RDO4HMS2 and RD70HUF2 two‑stage RF power amplifiers, including the evaluation board, component list, PCB layout and typical RF characteristics. It is intended for designers evaluating silicon RF power semiconductor solutions.
Key features include a frequency range of 450‑530 MHz, a 12.5 V supply, input power of 0.2 W, output power of 72‑90 W, and detailed performance curves such as Pout vs. Vdd and Pout vs. Vgg. Board dimensions are 82.5 mm × 60.0 mm and the document lists all component part numbers and land‑pattern dimensions.
| Frequency range | 450‑530 MHz |
|---|---|
| Supply voltage (Vdd) | 12.5 V |
| Input power | 0.2 W |
| Output power | 72‑90 W |
| Quiescent current (RDO4HMS2) | 0.1 A |
| Operating current | 10‑13 A |
| Board dimensions | 82.5 mm × 60.0 mm |
The amplifier operates from 450 MHz to 530 MHz.
Both amplifiers require a 12.5 V supply (Vdd).
The output power is specified as 72 W to 90 W.
RDO4HMS2 has a quiescent current of 0.1 A, while RD70HUF2 draws 1 A.