This datasheet lists the specifications of XBS306S17R-G Schottky diode, including maximum forward voltage, maximum reverse current, reverse recovery time, forward voltage, forward current, critical reverse voltage, absolute maximum ratings, application scenarios, marking rules, etc.
The XBS306S17R-G is a 3 A, 60 V Schottky barrier diode offered by Torex Semiconductor Ltd. It is designed for rectification and protection against reverse battery connection, and is halogen‑ and antimony‑free to meet RoHS compliance.
The datasheet lists absolute maximum ratings, typical electrical characteristics, and typical performance curves, along with packaging information and recommended operating temperature ranges.
| Forward Voltage (typ) | 0.59 V |
|---|---|
| Forward Current (average) | 3 A |
| Repetitive Peak Reverse Voltage | 60 V |
| Reverse Voltage (DC) | 60 V |
| Junction Temperature (max) | 125 °C |
| Storage Temperature Range | -55 °C to +150 °C |
| Inter‑Terminal Capacity (1 MHz) | 195 pF |
| Reverse Recovery Time (typ) | 55 ns |
The diode is rated for an average forward current of 3 A and a non‑continuous peak of 50 A.
It is intended for rectification and protection against reverse connection of a battery.