This document is a technical datasheet for the KEC BFQ31, an epitaxial planar NPN transistor intended for high frequency and VHF band amplifier applications. The device is housed in an SOT-23 package and features a maximum collector power dissipation of 200 mW.
| Junction Temperature | 150 C |
|---|
The maximum junction temperature is 150 degrees Celsius.
The maximum collector power dissipation is rated at 200 mW.
The maximum junction temperature must not exceed 150 C.
The transition frequency is typically 600 MHz when tested at a collector current of 4 mA and a collector-emitter voltage of 10 V.