FDMS3006SDC is an N-Channel MOSFET produced using Fairchild Semiconductor's advanced Power Trench® process. This device features low rDS(on) and high performance, making it suitable for applications such as synchronous rectifiers, secondary side rectification in communication equipment, and Vcore low side in high-end servers/workstations.
This document is a technical datasheet for the Fairchild Semiconductor FDMS3006SDC, an N-Channel Power Trench MOSFET. The device features Dual Cool top side cooling technology and includes an efficient monolithic SyncFET Schottky body diode designed for synchronous rectification applications.
| Drain to Source Voltage | 30 V |
|---|---|
| Continuous Drain Current (Package limited) | 49 A |
| Continuous Drain Current (Silicon limited) | 17 A |
| Power Dissipation (Ta = 25°C) | 3.3 W |
| Operating Junction Temperature Range | -55 to +150 °C |
The maximum continuous drain current is 49 A when the case temperature is 25°C.
The maximum power dissipation is 89 W when the case temperature is 25°C.
The operating and storage junction temperature range is -55 to +150 °C.