FDMS039N08B N-Channel PowerTrench® MOSFET is a low RDS(on), low FOM, low reverse recovery charge N-channel MOSFET, suitable for synchronous rectification, battery charger, motor drive and other applications
This document is a technical datasheet for the Fairchild Semiconductor FDMS039N08B, an N-Channel PowerTrench MOSFET. The device is designed with advanced processing to minimize on-state resistance while maintaining superior switching performance, making it suitable for synchronous rectification in server and telecom power supplies.
The datasheet provides comprehensive electrical characteristics, including maximum ratings such as a drain-to-source voltage of 80V and continuous drain current of 100A. It details dynamic parameters like input capacitance, gate charge, and switching times, along with typical performance curves for on-resistance, breakdown voltage, and thermal response.
| Drain to Source Voltage (Vdss) | 80 V |
|---|---|
| Gate to Source Voltage (Vgss) | +20 V |
| Power Dissipation (Ta = 25°C) | 104 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance Junction to Case (RthJC) | 1.2 °C/W |
| Static Drain to Source On Resistance (Typical) | 3.9 mΩ |
| Input Capacitance (Ciss) | 7600 pF |
The maximum continuous drain current (Id) at Ta = 25°C is 100 A.
The device operates and stores within a temperature range of -55 to +150 °C.
Yes, the document states that the product is RoHS Compliant.