FDMS2572 is an N-Channel UltraFET Trench MOSFET with a maximum rDS(on) of 47mΩ at VGS=10V, ID=4.5A. It also features low Miller charge and optimized efficiency at high frequencies, making it ideal for high frequency DC to DC converters.
This document is a datasheet for the Fairchild Semiconductor FDMS2572, an N-Channel UltraFET Trench MOSFET. The device features a maximum drain to source voltage of 150V and a continuous drain current of 27A, making it suitable for distributed power architectures and VRMs. Key characteristics include low on-resistance, low Miller charge, and UIS capability for single and repetitive pulses.
| Drain to Source Voltage | 150 V |
|---|---|
| Gate to Source Voltage | +20 V |
| Continuous Drain Current (Package limited) | 27 A |
| Continuous Drain Current (Silicon limited) | 27 A |
| Power Dissipation (Tc = 25°C) | 78 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case | 1.6 °C/W |
| Thermal Resistance, Junction to Ambient | 50 °C/W |
The device is ideal for distributed power architectures, VRMs, primary switches for 24V and 48V systems, and high voltage synchronous rectifiers.
Yes, the datasheet explicitly states that the device is RoHS Compliant.
The maximum on-resistance is 53 mΩ when Vgs is 10V and Id is 4.5A.