FDMS2506SDC is a N-channel MOSFET produced by Fairchild Semiconductor Corporation. The device uses dual cooling top side cooling PQFN package and has extremely low RDS(on) and high performance technology. Application scope includes synchronous rectifier for DC/DC converters, telecom secondary side rectification, and high end server/workstation Vcore low side MOSFET.
This document is a technical datasheet for the Fairchild Semiconductor FDMS2506SDC, an N-Channel MOSFET produced using the advanced PowerTrench process. The device features Dual Cool Top Side Cooling PQFN packaging and includes an efficient monolithic SyncFET Schottky body diode.
| Drain to Source Voltage | 25 V |
|---|---|
| Continuous Drain Current (Package limited) | 49 A |
| Continuous Drain Current (Silicon limited) | 202 A |
| Power Dissipation (Ta = 25°C) | 3.3 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction to Ambient) | 38 °CA/W |
The maximum continuous drain current is 49 A when the case temperature is 25°C.
The operating and storage junction temperature range is from -55 to +150 °C.
The thermal resistance from junction to ambient is 16 °CAV when mounted on a 20.9x10.4x12.7mm Aluminum Heat Sink with 200FPM airflow.