FDMS2672 N-Channel UltraFET Trench MOSFET is a 200V, 20A, 77mΩ MOSFET produced by Fairchild Semiconductor Corporation. This device has low Rds(on), low ESR, low total harmonic distortion and Miller gate charge, and is ideal for high frequency DC/DC conversion applications.
This document is a technical datasheet for the Fairchild Semiconductor FDMS2672, an N-Channel UltraFET Trench MOSFET. The device is rated at 200V drain-to-source voltage and 20A pulsed current, with a typical on-resistance of 77mΩ. It is designed for high-frequency DC to DC conversion applications due to its optimized characteristics including low ESR and low Miller gate charge.
| Drain to Source Voltage | 200 V |
|---|---|
| Pulsed Drain Current | 20 A |
| Power Dissipation (Ta = 25°C) | 2.5 W |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction to Case) | 1.6 CAV |
| Drain to Source On Resistance (Typical @ Veg = 10V) | 77 mΩ |
The typical on-resistance is 77mΩ at a gate-to-source voltage of 10V and drain current of 3.7A.
Yes, the device is RoHS Compliant.
The junction temperature range for operation and storage is from -55°C to +150°C.