The FDMS2508SDC is a N-Channel MOSFET produced by Fairchild Semiconductor. This device uses an advanced PowerTrench® process and features extremely low rDS(on) and extremely low Junction-to-Ambient thermal resistance, making it ideal for DC/DC converters, telecom secondary side rectification, and high end server/workstation Vcore low side MOSFET applications.
The FDMS2508SDC is an N-Channel MOSFET produced using Fairchild Semiconductor's advanced PowerTrench process. It features a Dual Cool™ Top Side Cooling PQFN package and an integrated SyncFET Schottky Body Diode for efficient synchronous rectification in DC/DC converters and telecom applications.
The device is rated for a maximum drain current of 49A (package limited) and 163A (silicon limited) at 25°C. It offers a maximum drain-to-source voltage of 25V and a static on-resistance of 1.95 mΩ under specific test conditions. The datasheet provides detailed electrical characteristics, thermal resistance values, and typical performance graphs.
| Drain to Source Voltage | 25 V |
|---|---|
| Drain Current - Continuous (Package limited) | 49 A |
| Drain Current - Continuous (Silicon limited) | 163 A |
| Power Dissipation (Ta = 25°C) | 78 W |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case (Top Source) | 3.5 °C/W |
| Thermal Resistance, Junction to Case (Bottom Drain) | 1.6 °C/W |
The continuous drain current is 49A when package limited and 163A when silicon limited at 25°C.
The maximum drain-to-source voltage rating is 25V.
Yes, it features a SyncFET Schottky Body Diode added for efficient synchronous rectification.