Fairchild FDS4465 P-Channel MOSFET Datasheet

FDS4465 P-Channel 1.8V Specified PowerTrench MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V – 8V).

Brand: Fairchild
Category: Other Electronics
Document type: Datasheet
Language: Chinese
Pages: 5
File format: PDF
File size: 138 KB
Published: 12 July, 2012
Updated: 01 October, 2023
MD5 checksum: A5960746688EB868C3419174E879D524
PDF: Fairchild FDS4465 P-Channel MOSFET Datasheet PDF

About this manual

The document describes the Fairchild Semiconductor FDS4465, a P-Channel 1.8V specified MOSFET utilizing the advanced PowerTrench process. It is designed specifically for power management applications requiring a wide gate drive voltage range from 1.8V to 8V. This manual is written in Chinese.

What's inside

General Description
Applications
Features
Absolute Maximum Ratings
Electrical Characteristics
Typical Characteristics

Specifications

Drain-Source Voltage	-20 V
Gate-Source Voltage	±8 V
Continuous Drain Current	-13.5 A
On-Resistance @ VGS = -4.5V	8.5 mΩ
Operating Junction Temperature Range	-55 to +175 °C

Frequently asked questions

What is the maximum continuous drain current for this MOSFET?

The device supports a continuous drain current of –13.5 A.

What is the maximum operating junction temperature?

The device can operate at a junction temperature up to +175 °C.

What is the maximum power dissipation for single operation?

The maximum power dissipation for single operation is 2.5 W.

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