This document introduces the FDS4435 P-Channel MOSFET product from Fairchild Semiconductor. The product features the PowerTrench process, with low RDS(ON), low gate charge, and fast switching speed. It is suitable for power management, load switch, and battery protection applications.
The document describes the Fairchild FDS4435, a rugged gate version of the company's advanced PowerTrench process. It is specifically optimized for power management applications requiring a wide range of gate drive voltage ratings from 4.5V to 25V.
Key features include low on-resistance (RDS(ON)), low gate charge, fast switching speed, and high performance trench technology. The device is suitable for use in load switches and battery protection circuits.
| Drain-Source Voltage (VDSS) | -30 V |
|---|---|
| Gate-Source Voltage (VGSS) | ±25 V |
| Continuous Drain Current (ID) | -8.8 A |
| On-Resistance at VGS = -10V | 20 mΩ |
| Operating Junction Temperature Range | -55 to +175 °C |
The maximum continuous drain current is –8.8 A.
The maximum drain-source voltage is –30 V.
The on-resistance is 20 mΩ when the gate-source voltage is –10 V.